Electrical properties of Si/Si interfaces by using surface-activated bonding
作者： J. Liang , T. Miyazaki , M. Morimoto , S. Nishida , N. Shigekawa
DOI: 10.1063/1.4829676
关键词:
摘要: Electrical properties of n-Si/n-Si, p-Si/n-Si, and p−-Si/n+-Si junctions fabricated by using surface-activated-bonding are investigated. The transmission electron microscopy/energy dispersive X-ray spectroscopy the n-Si/n-Si interfaces reveals no evidence oxide layers at interfaces. From current-voltage (I-V) capacitance-voltage (C-V) characteristics p-Si/n-Si junctions, it is found that interface states, likely to have formed due surface activation process Ar plasma, a more marked impact on electrical junctions. An analysis temperature dependence I-V indicates carrier transport across bonding for reverse-bias voltages in can be explained trap-assisted-tunneling Frenkel-Poole models, respectively.
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sci-hub.se 参考文章(33)
W. P. Maszara, G. Goetz, A. Caviglia, J. B. McKitterick, Bonding of silicon wafers for silicon‐on‐insulator Journal of Applied Physics. ,vol. 64, pp. 4943- 4950 ,(1988) , 10.1063/1.342443
Liwen Sang, Meiyong Liao, Naoki Ikeda, Yasuo Koide, Masatomo Sumiya, Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer Applied Physics Letters. ,vol. 99, pp. 161109- ,(2011) , 10.1063/1.3654155
Hiroshi Wada, Yoh Ogawa, Takeshi Kamijoh, Electrical characteristics of directly‐bonded GaAs and InP Applied Physics Letters. ,vol. 62, pp. 738- 740 ,(1993) , 10.1063/1.108855
Katsuaki Tanabe, Anna Fontcuberta i Morral, Harry A. Atwater, Daniel J. Aiken, Mark W. Wanlass, Direct-bonded GaAs∕InGaAs tandem solar cell Applied Physics Letters. ,vol. 89, pp. 102106- ,(2006) , 10.1063/1.2347280
M. M. R. Howlader, H. Okada, T. H. Kim, T. Itoh, T. Suga, Wafer Level Surface Activated Bonding Tool for MEMS Packaging Journal of The Electrochemical Society. ,vol. 151, ,(2004) , 10.1149/1.1758723
Takao Abe, Tokio Takei, Atsuo Uchiyama, Katsuo Yoshizawa, Yasuaki Nakazato, Silicon Wafer Bonding Mechanism for Silicon-on-Insulator Structures Japanese Journal of Applied Physics. ,vol. 29, pp. L2311- L2314 ,(1990) , 10.1143/JJAP.29.L2311
Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki Watanabe, Naoteru Shigekawa, Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface-Activated Bonding Applied Physics Express. ,vol. 6, pp. 021801- ,(2013) , 10.7567/APEX.6.021801
Michael J. Jackson, Biyun L. Jackson, Mark S. Goorsky, Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation Journal of Applied Physics. ,vol. 110, pp. 104903- ,(2011) , 10.1063/1.3662144
Hiroshi Wada, Takeshi Kamijoh, Wafer Bonding of InP to Si and its Application to Optical Devices Japanese Journal of Applied Physics. ,vol. 37, pp. 1383- 1390 ,(1998) , 10.1143/JJAP.37.1383
Y. C. Zhou, Z. H. Zhu, D. Crouse, Y. H. Lo, Electrical properties of wafer-bonded GaAs/Si heterojunctions Applied Physics Letters. ,vol. 73, pp. 2337- 2339 ,(1998) , 10.1063/1.122454