Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
作者： Liwen Sang , Meiyong Liao , Naoki Ikeda , Yasuo Koide , Masatomo Sumiya
DOI: 10.1063/1.3654155
关键词:
摘要: A super-thin AlN layer is inserted between the intrinsic InGaN and p-InGaN in solar cell structure to improve photovoltaic property. The dark current markedly decreased by more than two orders of magnitude short-circuit density increased from 0.77 mA/cm2 1.25 mA/cm2, leading a doubled conversion efficiency compared conventional structure. Electrical transport analysis reveals that forward electrical property greatly improved range open circuit voltage leakage mechanism changes defect related Poole-Frenkel emission interface tunneling emission. improvement on properties ascribed insertion interlayer, which not only provides barrier reduce for electrons, but also suppresses nonradiative recombination.
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