The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices
作者： J. J. Wierer , A. J. Fischer , D. D. Koleske
DOI: 10.1063/1.3301262
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摘要: … have favorable potentials, longer carrier lifetimes, and improve J sc to ∼ 0.40 … layers under InGaN/GaN quantum well/barrier light-emitting regions in LEDs to reduce NRCs and improve …
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