Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500nm spectral range
作者： E. A. Berkman , N. A. El-Masry , A. Emara , S. M. Bedair
DOI: 10.1063/1.2896648
关键词: Photoresistor 、 Wavelength 、 Lattice (order) 、 Optics 、 Materials science 、 Junction diodes 、 Photodiode 、 Quantum efficiency 、 Responsivity 、 Optoelectronics 、 Physics and Astronomy (miscellaneous)
摘要: We report on nearly lattice-matched grown InGaN based p-i-n photodiodes detecting in the 365–500nm range with tunable peak responsivity tailored by i-layer properties. The growth of lattice matched i- and n-InGaN layer leads to improvement device performance. This approach produced zero-bias responsivities up 0.037A∕W at 426nm, corresponding 15.5% internal quantum efficiency. wavelength ranged between 416 466nm, longest reported for III-N photodiodes. effects InN content thickness photodiode properties performance are discussed.
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