Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes
作者： J Pereiro , A Redondo-Cubero , S Fernandez-Garrido , C Rivera , A Navarro
DOI: 10.1088/0022-3727/43/33/335101
关键词:
摘要: This work reports on the fabrication of Schottky barrier based Mg-doped (In,Ga)N layers for fluorescence applications. Mg acceptors are used in order to compensate surface and bulk donors that prevent contacts unintentionally doped grown by plasma-assisted molecular beam epitaxy (PA-MBE). Rectifying properties exhibited a major improvement when : was used. The electrical optical measurements showed hole concentration up 3 × 1019 holes cm−3 with acceptor activation energy ~60 meV. Back-illuminated photodiodes fabricated 800 nm thick In0.18Ga0.82N band pass photo-response rejection ratio >102 between 420 470 peak responsivities 87 mA W−1 at ~470 nm. suitability these demonstrated.
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