Diffusion length of photoexcited carriers in GaN
作者： J.Y Duboz , F Binet , D Dolfi , N Laurent , F Scholz
DOI: 10.1016/S0921-5107(97)00192-X
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摘要: When additional carriers are introduced in a material with non uniform concentration, they tend to diffuse on scale given by their diffusion length. This parameter can be measured different methods. Depending the conditions, values found as recombination mechanisms differ. In this paper, we present situation GaN various experiments including photocarrier grating method, photoluminescence and spectral response photoconductors. We show that length varies from 0.1 μm few depending experimental conditions. The interpretation is based equations analysis of recombinations.
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