Exciton Diffusion in GaN Epitaxial Layers
作者： Yu. Rakovich , J.F. Donegan , A. Gladyshchuk , G. Yablonskii , B. Schineller
DOI: 10.1002/1521-3951(200111)228:2<493::AID-PSSB493>3.0.CO;2-6
关键词: Epitaxy 、 Reflection (mathematics) 、 Crystal 、 Exciton 、 Photoluminescence 、 Metalorganic vapour phase epitaxy 、 Chemistry 、 Thermal equilibrium 、 Condensed matter physics 、 Diffusion (business)
摘要: The photoluminescence (PL) and reflection excitonic spectra of GaN epitaxial layers grown on sapphire substrate by MOVPE were measured in the temperature region from 50 to 200 K. A three-layer model crystal was used for fitting spectrum. In this way dead layer thickness, resonance energies broadening parameters free excitons obtained. These then PL assuming a thermal equilibrium excitons. decrease diffusion coefficient increase radiative lifetime found with increasing temperature.
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