Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique
作者： Naoyuki Ino , Naoki Yamamoto
DOI: 10.1063/1.3040310
关键词:
摘要: Monochromatic cathodoluminescence (CL) images of threading dislocations in GaN epitaxial layers were observed using a transmission electron microscopy combined with CL system. The carrier diffusion lengths derived from the free exciton emission intensity profile dislocation contrast images. Si-doped and Mg-doped nearly same shorter than that undoped temperature range 20 to 140 K, respectively. Moreover, dependence length shows acoustic phonon scattering mainly affects process at low temperatures 40 120 K.
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