Electrical Transport Properties of p-GaN
作者： Hisashi Nakayama , Peter Hacke , Mohammad Rezaul Huque Khan , Theeradetch Detchprohm , Kazumasa Hiramatsu Kazumasa Hiramatsu
DOI: 10.1143/JJAP.35.L282
关键词:
摘要: … Electrical transport properties of Mg-doped p-GaN grown by … The acceptor level is 0.17 ± 0.01 eV. The hole mobility is 10 … to determine the temperature dependence of the Fermi level. …
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ipap.jp参考文章(1)
Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu, Isamu Akasaki, P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) Japanese Journal of Applied Physics. ,vol. 28, ,(1989) , 10.1143/JJAP.28.L2112