Contrast analysis of dislocation images in TEM–cathodoluminescence technique

摘要: Monochromatic cathodoluminescence CL images of the threading dislocations in Si-doped n-GaN were observed by TEM-CL technique. We studied dependence contrast and FWHM dislocation image on sample thickness, accelerating voltage temperature. The spectra measured at various temperatures analyzed to find property band edge (BE) emission used for imaging. observation showed that monotonically increases with thickness decreases voltage, which qualitatively agrees behavior expected from theory. On other hand, temperature shows an anomalous behavior. This can be explained mobility lifetime holes as a function relation between diffusion length is also discussed.