Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
作者： Jay M. Shah , Y.-L. Li , Th. Gessmann , E. F. Schubert
DOI: 10.1063/1.1593218
关键词: Doping 、 Heterojunction 、 Algan gan 、 p–n junction 、 Superlattice 、 Optoelectronics 、 Ohmic contact 、 Diode 、 Materials science
摘要: Diode ideality factors much higher than the expected values of 1.0 to 2.0 have been reported in GaN-based p-n junctions. It is shown that moderately doped unipolar heterojunctions as well metal-semiconductor junctions, particular metal contact p-type GaN, can increase factor greater 2.0. A relation derived for effective by taking into account all junctions diode structure. Diodes fabricated from a bulk GaN junction and structure with AlGaN/GaN superlattice display 6.9 4.0, respectively. These results are consistent theoretical model fact superlattices facilitate formation low-resistance ohmic contacts.
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