Predicting LED parameters from electroluminescent semiconductor wafer testing
作者： Dong Chen
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摘要: A diode model and conductive-probe measurements taken at the wafer lever are used to predict characterization parameters of a semiconductor device manufactured from wafer. current-voltage curve (I-V) that expresses relationship as function resistance, ideality factor, reverse saturation current is fitted number measurement data. The (I-V d ) for then estimated by subtracting product times resistance produced fitting model.
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