Low Stokes shift in thick and homogeneous InGaN epilayers
作者： S. Srinivasan , F. Bertram , A. Bell , F. A. Ponce , S. Tanaka
DOI: 10.1063/1.1436531
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摘要: The optical properties of thick InxGa1−xN layers have been studied using absorption and cathodoluminescence techniques. indium composition x the ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. difference between band gap peak emission energy (Stokes shift) was found be considerably smaller than reported in past for these alloys. Monochromatic images show that light most film is homogeneous associated with a low Stokes shift. A second at longer wavelengths observed x⩾0.08. This originates indium-rich regions vicinity extended defects, exhibits larger Our observations indicate it possible grow InGaN epilayers high composition, homogeneity, lower
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