Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures
作者： A. Armstrong , M. H. Crawford , D. D. Koleske
DOI: 10.1007/S11664-010-1453-4
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摘要: Deep-level defects in In0.17Ga0.83N/In0.02Ga0.98N/p-GaN:Mg heterostructures were studied using deep-level optical spectroscopy (DLOS). Depth-resolved DLOS was achieved by exploiting the polarization-induced electric fields to discriminate among located In0.17Ga0.83N and In0.02Ga0.98N regions. Growth conditions for InxGa1� xN layers nominally same as those InGaN/GaN multi-quantum-well (MQW) structures, so defect states reported here are expected be active MQW Thus, this work provides important insight into that likely influence radiative efficiency. In0.17Ga0.83N-related bandgap observed at Ev + 1.60 eV 2.59 eV, where is valence-band maximum, compared with levels 1.85 2.51 3.30 region. A lighted capacitance–voltage technique used determine areal density of deep states. The possible origins associated considered along their potential roles light-emitting diodes.
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