Enhanced optical properties of InGaN MQWs with InGaN underlying layers
作者： JK Son , SN Lee , T Sakong , HS Paek , O Nam
DOI: 10.1016/J.JCRYSGRO.2005.10.071
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摘要: The influence of an InGaN underlying layer under multiquantum wells (MQWs) on the optical properties was investigated. Two MQW structures with and without layers were prepared by MOCVD sapphire substrates. Optical characterized means temperature-dependent photoluminescence (PL), PL excitation (PLE), space-resolved micro-PL (μ-PL) time-resolved (TRPL) measurements. From mapping results, a more uniform emission distribution internal quantum efficiency about 45% have been achieved below MQWs. We observed enhancement both intensity lifetime at room temperature for MQWs grown layer, compared to layer.
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