Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
作者： H. Y. Ryu , K. H. Ha , J. H. Chae , K. S. Kim , J. K. Son
DOI: 10.1063/1.2364273
关键词:
摘要: The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405nm. Based on semiconductor rate equations, the is unambiguously determined by analysis electroluminescence characteristics. exceeds 70% even far below threshold ∼3mA a high temperature 80°C. This highly characteristic attributed to reduced contribution nonradiative recombination in LDs with low-dislocation-density active material. It also found that almost independent current, indicating not major factor which determines lasing 405nm having low dislocation density.
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