Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
作者： Q. Dai , M. F. Schubert , M. H. Kim , J. K. Kim , E. F. Schubert
DOI: 10.1063/1.3100773
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摘要: Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence integrated PL intensity power allow us to determine internal efficiency (IQE) as a function carrier concentration. measured IQE sample lowest dislocation density (5.3×108 cm−2) is high 64%. nonradiative coefficient A varies from 6×107 2×108 s−1 increases 5.3×108 5.7×109 cm−2, respectively.
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