High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers
作者： Sung-Nam Lee , J. K. Son , H. S. Paek , Y. J. Sung , K. S. Kim
DOI: 10.1063/1.2965113
关键词:
摘要: InGaN optical confinement layers (OCLs) were introduced into blue-violet AlInGaN-based laser diodes (LDs), resulting in the drastic improvements of lasing performance. Comparing with conventional LD structure, lowest threshold current density 2.3kA∕cm2 has been achieved by adding 100-nm-thick OCLs which represented maximum factor. Additionally, we observed high quantum efficiency and uniform emission intensity distribution wells grown on lower OCL than typical GaN layer. Upper can reduce Mg diffusion from p-type to active region separating distance between layers.
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HS Paek, T Sakong, SN Lee, JK Son, HY Ryu, OH Nam, Y Park, None, Growth and characterization of AlxGa1-xN LEO substrates Physica B-condensed Matter. ,vol. 376, pp. 499- 501 ,(2006) , 10.1016/J.PHYSB.2005.12.127
Shin-ichi Nagahama, Yasunobu Sugimoto, Tokuya Kozaki, Takashi Mukai, Recent progress of AlInGaN laser diodes Integrated Optoelectronic Devices 2005. ,vol. 5738, pp. 57- 62 ,(2005) , 10.1117/12.597098
Sung-Nam Lee, HS Paek, HY Ryu, JK Son, T Sakong, T Jang, KK Choi, YJ Sung, YH Kim, HK Kim, SH Chae, KH Ha, JH Chae, KS Kim, JS Kwak, OH Nam, Y Park, None, Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire Journal of Crystal Growth. ,vol. 298, pp. 695- 698 ,(2007) , 10.1016/J.JCRYSGRO.2006.10.171
J. K. Son, J. S. Hwang, S. N. Lee, T. Sakong, H. Paek, S. Chae, H. K. Kim, O. Nam, J. Y. Kim, Y. H. Cho, Y. Park, Analysis of optical loss on blue-violet laser diodes Physica Status Solidi (c). ,vol. 3, pp. 2178- 2181 ,(2006) , 10.1002/PSSC.200565460
Tetsuya Akasaka, Hideki Gotoh, Tadashi Saito, Toshiki Makimoto, High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers Applied Physics Letters. ,vol. 85, pp. 3089- 3091 ,(2004) , 10.1063/1.1804607
Sung-Nam Lee, S. Y. Cho, H. Y. Ryu, J. K. Son, H. S. Paek, T. Sakong, T. Jang, K. K. Choi, K. H. Ha, M. H. Yang, O. H. Nam, Y. Park, E. Yoon, High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers Applied Physics Letters. ,vol. 88, pp. 111101- ,(2006) , 10.1063/1.2185251
K. S. Kim, J. K. Son, S. N. Lee, Y. J. Sung, H. S. Paek, H. K. Kim, M. Y. Kim, K. H. Ha, H. Y. Ryu, O. H. Nam, T. Jang, Y. J. Park, Characteristics of long wavelength InGaN quantum well laser diodes Applied Physics Letters. ,vol. 92, pp. 101103- ,(2008) , 10.1063/1.2892634
M. Kuramoto, C. Sasaoka, N. Futagawa, M. Nido, A.A. Yamaguchi, Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD) Physica Status Solidi (a). ,vol. 192, pp. 329- 334 ,(2002) , 10.1002/1521-396X(200208)192:2<329::AID-PSSA329>3.0.CO;2-A
JK Son, SN Lee, T Sakong, HS Paek, O Nam, Y Park, JS Hwang, JY Kim, Yong-Hoon Cho, None, Enhanced optical properties of InGaN MQWs with InGaN underlying layers Journal of Crystal Growth. ,vol. 287, pp. 558- 561 ,(2006) , 10.1016/J.JCRYSGRO.2005.10.071
T. Asano, M. Takeya, T. Tojyo, T. Mizuno, S. Ikeda, K. Shibuya, T. Hino, S. Uchida, M. Ikeda, High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio Applied Physics Letters. ,vol. 80, pp. 3497- 3499 ,(2002) , 10.1063/1.1478157