Analysis of optical loss on blue-violet laser diodes

摘要: We measured optical loss of laser diodes by taking the intensity decay edge emitting photoluminescence with respect to distance from cleaved edges wafers position where an excitation was focused. Measurements were performed on different thickness InGaN p-waveguide. found that determined absorption Mg doped GaN for narrow waveguide and thick waveguide. From experimental data fittings, we obtained 40 cm–1 at 405 nm. Therefore, conclude losses still remain even though Mg-doped regions are far enough QWs layers is relatively high comparing undoped GaN. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)