Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)
作者： M. Kuramoto , C. Sasaoka , N. Futagawa , M. Nido , A.A. Yamaguchi
DOI: 10.1002/1521-396X(200208)192:2<329::AID-PSSA329>3.0.CO;2-A
关键词: Optoelectronics 、 Optics 、 Differential gain 、 Laser diode 、 Optical field 、 Diode 、 Epitaxy 、 Chemistry 、 Fabrication 、 Active layer 、 Laser
摘要: The origin of the internal loss in ridge-type laser diodes (LDs) fabricated using selective re-growth is investigated through a systematic device characterization and additional optical measurements. We found that this LD mainly caused by absorptive'layers at boundary Mg-doped GaN layer. can be significantly reduced re-design structure to avoid these absorptive regions shifting perpendicular field n-cladding side. re-designed LDs had very low threshold current 10 mA superior gain characteristics. These results indicate, InGaN-quantum-well (QW) active layer has large differential fewer non-radiative defects. fabrication method LD, i.e. epitaxial growth on low-dislocation-density substrates combined with process without dry-etching, responsible for high quality QWs.
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