Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
作者： Shuji Nakamura , Masayuki Senoh , Shin-ichi Nagahama , Toshio Matsushita , Hiroyuki Kiyoku
DOI: 10.1143/JJAP.38.L226
关键词:
摘要: A violet InGaN multi-quantum-well (MQW)/GaN/AlGaN separate-confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN sapphire. The threshold current density 3.9 kA/cm2. LDs with cleaved mirror facets showed an output power as high 30 mW under room-temperature continuous-wave (CW) operation. stable fundamental transverse mode in the near-field patterns observed at up to mW. lifetime of a constant 5 more than 1,000 h CW operation ambient temperature 50°C. estimated approximately 3,000 these high-power and high-temperature operating conditions.
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