In concentration and tilt of the a-plane (112¯0) InGaN/GaN film by TEM analysis
作者： N. Nakanishi , K. Kusakabe , T. Yamazaki , K. Ohkawa , I. Hashimoto
DOI: 10.1016/J.PHYSB.2005.12.134
关键词:
摘要: A systematic structural analysis of a-plane InGaN/GaN was performed using electron diffraction, high-resolution transmission microscopy (HRTEM), and energy-dispersive X-ray spectroscopy. From the results local Fourier diffractograms HRTEM images, it found that exhibits coherent epitaxial growth a slight tilt direction between GaN InGaN layers. Furthermore, In concentration angle increase simultaneously with increasing distance from interface.
harvard.edu
elsevier.com
sci-hub.se 参考文章(21)
Yukio Narukawa, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, Shuji Nakamura, Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells Physical Review B. ,vol. 55, pp. 1938- 1941 ,(1997) , 10.1103/PHYSREVB.55.R1938
T. M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN Applied Physics Letters. ,vol. 84, pp. 5025- 5027 ,(2004) , 10.1063/1.1763634
John C. H. Spence, High-Resolution Electron Microscopy ,(2013)
H. M. Ng, Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates Applied Physics Letters. ,vol. 80, pp. 4369- 4371 ,(2002) , 10.1063/1.1484543
F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, J. W. Steeds, Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers Applied Physics Letters. ,vol. 69, pp. 337- 339 ,(1996) , 10.1063/1.118052
M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, S. P. DenBaars, Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire Applied Physics Letters. ,vol. 81, pp. 469- 471 ,(2002) , 10.1063/1.1493220
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates Applied Physics Letters. ,vol. 68, pp. 2105- 2107 ,(1996) , 10.1063/1.115599
S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Luminescences from localized states in InGaN epilayers Applied Physics Letters. ,vol. 70, pp. 2822- 2824 ,(1997) , 10.1063/1.119013
D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Sch�n, M. Heuken, A. Rizzi, Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy Physica Status Solidi (a). ,vol. 177, pp. 145- 155 ,(2000) , 10.1002/(SICI)1521-396X(200001)177:1<145::AID-PSSA145>3.0.CO;2-0
Ok-Hyun Nam, Michael D. Bremser, Tsvetanka S. Zheleva, Robert F. Davis, Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy Applied Physics Letters. ,vol. 71, pp. 2638- 2640 ,(1997) , 10.1063/1.120164