Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
作者： M. D. Craven , S. H. Lim , F. Wu , J. S. Speck , S. P. DenBaars
DOI: 10.1063/1.1493220
关键词:
摘要: … The temperature was then ramped to 1100C and epitaxial GaN films approximately 1.5 m … The crystallographic orientation and structural quality of the as-grown films were determined …
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