Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy

摘要: Gallium‐nitride single crystals were grown on (0001)‐ and (0112)‐oriented sapphire substrates by metalorganic vapor‐phase epitaxy. Smooth‐surfaced layers with fine ridgelike facets can be obtained the (0112) sapphire. They have lower carrier concentrations than (0001) Deep centers responsible for blue (∼425 nm) yellow (∼560 emissions from undoped are reduced substrates, as compared substrates. On other hand, better crystallinity higher Zn‐incorporation efficiency those Growth kinetics of GaN discussed developing a tentative model.