Nonpolar and Semipolar GaN Growth by HVPE
作者： Paul T. Fini , Benjamin A. Haskell
DOI: 10.1007/978-3-642-04830-2_5
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摘要: This chapter describes the structural and morphological characteristics of planar nonpolar semipolar GaN films grown by hydride vapor phase epitaxy (HVPE). While smooth enough to allow device regrowth fabrication, these often contain ∼1010cm−2 threading dislocations ∼105cm−1 basal plane stacking faults. Lateral epitaxial overgrowth (LEO) has been developed largely eliminate faults in overgrown material, resulting significant improvements surface morphology luminescence optoelectronic devices upon them.
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