Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition
作者： Jianping Liu , Yun Zhang , Zachary Lochner , Seong-Soo Kim , Hyunsoo Kim
DOI: 10.1016/J.JCRYSGRO.2010.09.071
关键词:
摘要: Abstract We report the effects of epitaxial layer design on III-N visible laser diode (LD) performance. In order to mitigate electron accumulation at interface between top GaN quantum barrier and AlGaN blocking (EBL) induced by polarization fields, a tapered EBL was used. Compared LDs with conventional EBLs, threshold current density is significantly reduced slope efficiency increased. 0.03 Ga 0.97 N used as waveguide layers in blue LD structures increase optical confinement. It observed that waveguiding improve emission active region addition offering better The responsible underlying mechanism has been investigated.
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