Effect of p-AlxGa1−xN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes

摘要: The authors investigated the effect of p-type AlGaN electron blocking layer (EBL) on optical and electrical properties GaN-based blue light-emitting diodes. 405- 325-nm photoluminescence (PL) analyses showed maximum intensities from 18% 12% p-AlGaN EBL, respectively. Both PL methods would make a clear distinction between qualities InGaN well carrier transport n-/p-type layers to active layer. From electroluminescence (EL) measurement, it found that highest EL intensity was obtained at which consistent with result PL. these results, concluded EBL effectively suppress overflow problem for dominant higher than Al in by measuring photogenerated current.