Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
作者： Sang-Heon Han , Dong-Yul Lee , Sang-Jun Lee , Chu-Young Cho , Min-Ki Kwon
DOI: 10.1063/1.3153508
关键词: Materials science 、 Voltage droop 、 Electron blocking layer 、 Light-emitting diode 、 Diode 、 High current density 、 Current density 、 Optoelectronics 、 Multiple quantum 、 Quantum efficiency
摘要: … However, the EQE of LEDs without an EBL is higher than LEDs with an EBL as injection current density is increased. The improved EQE of LEDs without an EBL at high current density …
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