Optical properties of Si-doped GaN
作者： E. F. Schubert , I. D. Goepfert , W. Grieshaber , J. M. Redwing
DOI: 10.1063/1.119689
关键词: Analytical chemistry 、 Absorption (electromagnetic radiation) 、 Luminescence 、 Stokes shift 、 Materials science 、 Band gap 、 Photoluminescence 、 Condensed matter physics 、 Impurity 、 Doping 、 Laser linewidth
摘要: The optical properties of n-type GaN are investigated for Si doping concentrations ranging from 5×1016 to 7×1018 cm−3. photoluminescence linewidth the near-band gap transition increases 47 78 meV as concentration is increased. broadening modeled in terms potential fluctuations caused by random distribution donor impurities. Good agreement found between experimental and theoretical results. intensity near-band-gap monotonically increased indicating that nonradiative transitions dominate at a low density. comparison absorption, luminescence, reflectance, photoreflectance measurements reveals absence Stokes shift room temperature demonstrating intrinsic nature edge transition.
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sci-hub.se 参考文章(15)
Jörg Neugebauer, Chris G. Van de Walle, Gallium vacancies and the yellow luminescence in GaN Applied Physics Letters. ,vol. 69, pp. 503- 505 ,(1996) , 10.1063/1.117767
GD Chen, M Smith, JY Lin, HX Jiang, Su‐Huai Wei, M Asif Khan, CJ Sun, None, Fundamental optical transitions in GaN Applied Physics Letters. ,vol. 68, pp. 2784- 2786 ,(1996) , 10.1063/1.116606
L. Calderon, Y. Lu, H. Shen, J. Pamulapati, M. Dutta, W. H. Chang, L. W. Yang, P. D. Wright, Photoluminescence characterization of nonradiative recombination in carbon‐doped GaAs Applied Physics Letters. ,vol. 60, pp. 1597- 1599 ,(1992) , 10.1063/1.107483
J. I. Pankove, J. A. Hutchby, Photoluminescence of ion‐implanted GaN Journal of Applied Physics. ,vol. 47, pp. 5387- 5390 ,(1976) , 10.1063/1.322566
Al. A. Kolomenskii, H. A. Schuessler, Nonlinear excitation of capillary waves by the Marangoni motion induced with a modulated laser beam. Physical Review B. ,vol. 52, pp. 16- 19 ,(1995) , 10.1103/PHYSREVB.52.16
B. Monemar, Fundamental energy gap of GaN from photoluminescence excitation spectra Physical Review B. ,vol. 10, pp. 676- 681 ,(1974) , 10.1103/PHYSREVB.10.676
Toshio Ogino, Masaharu Aoki, Mechanism of Yellow Luminescence in GaN Japanese Journal of Applied Physics. ,vol. 19, pp. 2395- 2405 ,(1980) , 10.1143/JJAP.19.2395
A. Hoffmann, L. Eckey, P. Maxim, J.-Chr. Holst, R. Heitz, D.M. Hofmann, D. Kovalev, G. Stevde, D. Volm, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki, Dynamical study of the yellow luminescence band in GaN Solid-state Electronics. ,vol. 41, pp. 275- 278 ,(1997) , 10.1016/S0038-1101(96)00228-6
M Smith, GD Chen, JY Lin, HX Jiang, M Asif Khan, CJ Sun, Q Chen, JW Yang, None, Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition Journal of Applied Physics. ,vol. 79, pp. 7001- 7004 ,(1996) , 10.1063/1.362448
Evan O. Kane, Thomas-Fermi Approach to Impure Semiconductor Band Structure Physical Review. ,vol. 131, pp. 79- 88 ,(1963) , 10.1103/PHYSREV.131.79