Polaronic Effect on the Electron Energy Spectrum in a Wurtzite InxGa1-xN/GaN Quantum Well
作者： Feng Qi Zhao , Min Zhang
关键词:
摘要: The properties of polarons in wurtzite and zinc-blende In x Ga 1- N/GaN quantum wells are investigated by adopting an effective-mass approximation a modified Lee–Low–Pines variational method. energy shifts at ground state due to the confined, half-space interface phonon modes (including symmetric antisymmetric parts), as well transition energy, obtained numerical computation. results indicate that both decrease monotonically with increasing width. For wider well, total contribution polaron mainly comes from confined modes, while for narrower one, is modes. built-in electric field has remarkable effect on contributed various It can be also found polaronic much...
jps.jp
sci-hub.se 参考文章(47)
R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, U. Köhler, D. J. As, K. Lischka, Refractive index and gap energy of cubic InxGa1−xN Applied Physics Letters. ,vol. 76, pp. 291- 293 ,(2000) , 10.1063/1.125725
Zhao Feng-Qi, Zhou Bing-Qing, Energy levels of a polaron in wurtzite nitride parabolic quantum well under external electric field Acta Physica Sinica. ,vol. 56, pp. 4856- 4863 ,(2007) , 10.7498/APS.56.4856
H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Höpler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, H.-J. Körner, Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films Applied Physics Letters. ,vol. 71, pp. 1504- 1506 ,(1997) , 10.1063/1.119949
Jie Cui, Jun-jie Shi, Exciton states in wurtzite InGaN/GaN quantum wells: Strong built-in electric field and interface optical-phonon effects Solid State Communications. ,vol. 145, pp. 235- 240 ,(2008) , 10.1016/J.SSC.2007.11.021
Jun-jie Shi, Xiu-qin Zhu, Zi-xin Liu, Shao-hua Pan, Xing-yi Li, Polaron effects in asymmetric semiconductor quantum-well structures Physical Review B. ,vol. 55, pp. 4670- 4679 ,(1997) , 10.1103/PHYSREVB.55.4670
Jun-jie Shi, Xing-li Chu, E. M. Goldys, Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/Al x Ga 1-x N quantum wells Physical Review B. ,vol. 70, pp. 115318- ,(2004) , 10.1103/PHYSREVB.70.115318
H. Wang, G. A. Farias, V. N. Freire, Interface-related exciton-energy blueshift in GaN/Al x Ga 1-x N zinc-blende and wurtzite single quantum wells Physical Review B. ,vol. 60, pp. 5705- 5713 ,(1999) , 10.1103/PHYSREVB.60.5705
S. M. Komirenko, K. W. Kim, M. A. Stroscio, M. Dutta, Dispersion of polar optical phonons in wurtzite quantum wells Physical Review B. ,vol. 59, pp. 5013- 5020 ,(1999) , 10.1103/PHYSREVB.59.5013
Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama, Hirofumi Kan, Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode Applied Physics Letters. ,vol. 96, pp. 211122- ,(2010) , 10.1063/1.3442918
M.E. Mora-Ramos, Polaron Effective Mass and Binding Energy in Semiconducting InxGa1?xN physica status solidi (b). ,vol. 223, pp. 843- 851 ,(2001) , 10.1002/1521-3951(200102)223:3<843::AID-PSSB843>3.0.CO;2-G