Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

作者: Takeyoshi Onuma , Kento Narutani , Shuhei Fujioka , Tomohiro Yamaguchi , Ke Wang

DOI: 10.14723/TMRSJ.40.149

关键词:

摘要:

参考文章(2)
Liwen Sang, Meiyong Liao, Naoki Ikeda, Yasuo Koide, Masatomo Sumiya, Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer Applied Physics Letters. ,vol. 99, pp. 161109- ,(2011) , 10.1063/1.3654155
HX Jiang, JY Lin, J Li, A Sedhain, BN Pantha, None, Electrical and optical properties of p-type InGaN Applied Physics Letters. ,vol. 95, pp. 261904- ,(2009) , 10.1063/1.3279149