High-temperature ultraviolet detection based on InGaN Schottky photodiodes
作者： Liwen Sang , Meiyong Liao , Yasuo Koide , Masatomo Sumiya
DOI: 10.1063/1.3615291
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摘要: A thermally stable metal-insulator-semiconductor (MIS) Schottky-type photodiode with high performance based on the InGaN film is demonstrated at temperatures up to 523 K. The reverse leakage current remains a low level (10−7−10−8 A), while UV responsivity as 5.6 A/W −3 V under K, without observing persistent photoconductivity. discrimination ratio between ultraviolet (378 nm) and visible light (600 maintained be more than 105. temperature-dependent current-voltage characteristics of MIS diode were analyzed. photocurrent gain biases was interpreted in term thermionic-field emission (TFE) field-emission tunneling mechanism from room-temperature 463 TFE becomes dominant temperatures.
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