High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator
作者： Liwen Sang , Meiyong Liao , Yasuo Koide , Masatomo Sumiya
DOI: 10.1063/1.3562326
关键词: Ultraviolet 、 Optics 、 Band gap 、 Photocurrent 、 Photodetector 、 Responsivity 、 Dark current 、 Wide-bandgap semiconductor 、 Semiconductor 、 Materials science 、 Optoelectronics
摘要: The authors report on the high-performance metal-semiconductor-metal (MSM) photodetectors (PDs) fabricated high-quality InGaN film by introducing a superwide bandgap calcium fluoride (CaF2) as insulator. dark current of PDs with CaF2 is drastically reduced six orders magnitude compared those without CaF2, resulting in an extremely high discrimination ratio larger than 106 between ultraviolet and visible light. responsivity at 338 nm 10.4 A/W biased 2 V, corresponding to photocurrent gain around 40. layer behaves excellent insulator for InGaN-based MSM-PDs condition, while it allows electron injection through metal/semiconductor interface under illumination, contributing sacrificing response time (∼ms).
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