InGaN/GaN MQW p–n junction photodetectors
作者： Yu-Zung Chiou , Yan-Kuin Su , Shoou-Jinn Chang , Yi-Chao Lin , Chia-Sheng Chang
DOI: 10.1016/S0038-1101(02)00230-7
关键词:
摘要: InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the MQW exhibit a 20 V breakdown voltage 3.5 forward mA turn on voltage. also photocurrent to dark current contrast ratio is higher than 105 when 0.4 reverse bias applied photodetectors. Furthermore, it maximum responsivity 1.28 1.76 A/W 0.1 3 bias, respectively.
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