High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
作者： Ta-Ming Kuan , Shoou-Jinn Chang , Yan-Kuin Su , Chih-Hsin Ko , James B. Webb
DOI: 10.1143/JJAP.42.5563
关键词:
摘要: Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve extremely high photodetector responsiveness. At incident light wavelength 240 nm, it was found that responsiveness reach 5.2×109 A/W.
harvard.edu
jsap.jp参考文章(5)
Shoou-Jinn Chang, Sun-Chin Wei, Yan-Kuin Su, Chun-Hsing Liu, Shih-Chih Chen, Uang-Heay Liaw, Tzong-Yow Tsai, Tzu-Hsuan Hsu, AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer Japanese Journal of Applied Physics. ,vol. 42, pp. 3316- 3319 ,(2003) , 10.1143/JJAP.42.3316
Yu-Zung Chiou, Yan-Kuin Su, Shoou-Jinn Chang, Yi-Chao Lin, Chia-Sheng Chang, Chin-Hsiang Chen, InGaN/GaN MQW p–n junction photodetectors Solid-state Electronics. ,vol. 46, pp. 2227- 2229 ,(2002) , 10.1016/S0038-1101(02)00230-7
M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, L. F. Reitz, High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers Applied Physics Letters. ,vol. 60, pp. 2917- 2919 ,(1992) , 10.1063/1.106819
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, E. J. Tarsa, High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN Applied Physics Letters. ,vol. 75, pp. 247- 249 ,(1999) , 10.1063/1.124337
M.A. Khan, Q. Chen, J.N. Kuznia, C.J. Sun, M.S. Shur, Gated photodetector based on GaN/AlGaN heterostructure field effect transistor Electronics Letters. ,vol. 31, pp. 398- 400 ,(1995) , 10.1049/EL:19950247