Ultraviolet Photodetectors Using Transparent Gate AlGaN/GaN High Electron Mobility Transistor on Silicon Substrate
作者： Tomotaka Narita , Akio Wakejima , Takashi Egawa
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摘要: In this paper, UV photoconductivity of a transparent gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate is demonstrated. The enables the HEMT to standby under pinch-off conditions for operation as photodetector. Therefore, device can overcome drawback standby-current in conventional metal field-effect (FET)-based photodetectors without sacrificing its responsivity. A negative threshold-voltage shift -0.25 V and significant drain-current increase over two orders magnitude were observed UV-light irradiation condition from surface-side. responsivity 2.0×105 A/W at 360 nm with low leakage current 3×10-6 A/mm was simultaneously achieved. These experimental results agreement models generation photo carrier transportation heterostructure.
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