作者: D. Brunner , H. Angerer , E. Bustarret , F. Freudenberg , R. Höpler
DOI: 10.1063/1.366309
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摘要: We have studied the dependence of the absorption edge and the refractive index of wurtzite Al x Ga 1− x N films on temperature and composition using transmission and photothermal deflection spectroscopy. The Al molar fraction of the Al x Ga 1− x N films grown by plasma induced molecular beam epitaxy was varied through the entire range of composition (0⩽ x⩽ 1). We determined the absorption edges of Al x Ga 1− x N films and a bowing parameter of 1.3±0.2 eV. The refractive index in the photon energy range between 1 and 5.5 eV and …