Optical constants of epitaxial AlGaN films and their temperature dependence

作者: D. Brunner , H. Angerer , E. Bustarret , F. Freudenberg , R. Höpler

DOI: 10.1063/1.366309

关键词:

摘要: We have studied the dependence of the absorption edge and the refractive index of wurtzite Al x Ga 1− x N films on temperature and composition using transmission and photothermal deflection spectroscopy. The Al molar fraction of the Al x Ga 1− x N films grown by plasma induced molecular beam epitaxy was varied through the entire range of composition (0⩽ x⩽ 1). We determined the absorption edges of Al x Ga 1− x N films and a bowing parameter of 1.3±0.2 eV. The refractive index in the photon energy range between 1 and 5.5 eV and …

参考文章(24)
Manuel Cardona, Peter Y. Yu, Fundamentals of Semiconductors ,(1995)
P. Lautenschlager, M. Garriga, S. Logothetidis, M. Cardona, Interband critical points of GaAs and their temperature dependence. Physical Review B. ,vol. 35, pp. 9174- 9189 ,(1987) , 10.1103/PHYSREVB.35.9174
W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, M. Stutzmann, Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films Applied Physics Letters. ,vol. 68, pp. 970- 972 ,(1996) , 10.1063/1.116115
S. Yoshida, S. Misawa, S. Gonda, Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy Journal of Applied Physics. ,vol. 53, pp. 6844- 6848 ,(1982) , 10.1063/1.329998
G. Dollinger, T. Faestermann, P. Maier-Komor, High resolution depth profiling of light elements Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 64, pp. 422- 427 ,(1992) , 10.1016/0168-583X(92)95508-O
M. A. Vidal, G. Ramírez‐Flores, H. Navarro‐Contreras, A. Lastras‐Martínez, R. C. Powell, J. E. Greene, Refractive indices of zincblende structure β‐GaN(001) in the subband‐gap region (0.7–3.3 eV) Applied Physics Letters. ,vol. 68, pp. 441- 443 ,(1996) , 10.1063/1.116406
Y.P. Varshni, Temperature dependence of the energy gap in semiconductors Physica D: Nonlinear Phenomena. ,vol. 34, pp. 149- 154 ,(1967) , 10.1016/0031-8914(67)90062-6
Eva C. Freeman, William Paul, Optical constants of rf sputtered hydrogenated amorphous Si Physical Review B. ,vol. 20, pp. 716- 728 ,(1979) , 10.1103/PHYSREVB.20.716
Frank Stern, Robert M. Talley, Impurity Band in Semiconductors with Small Effective Mass Physical Review. ,vol. 100, pp. 1638- 1643 ,(1955) , 10.1103/PHYSREV.100.1638