Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors
作者： Tomotaka Narita , Akio Wakejima , Takashi Egawa
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摘要: We found that inhomogeneous epitaxial growth in a superlattice near Si substrate creates an area where local leakage current occurs at the interface between AlGaN surface and Schottky electrode. Here, electroluminescence (EL) through transparent gate of AlGaN/GaN high-electron-mobility transistor enables us to identify entire periphery. Further, supports clear observation under EL spots. The energy-dispersive X-ray spectroscopy profile indicates Ga-rich layer was grown early stage creation.
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