InGaN quantum dot photodetectors
作者： LW Ji , Yan-Kuin Su , Shoou-Jinn Chang , SH Liu , CK Wang
DOI: 10.1016/S0038-1101(03)00159-X
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摘要: Abstract Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth stop during the metal-organic chemical vapor deposition growth. With a 12 s interruption, we successfully formed QDs with typical lateral size of 25 nm and an average height 4.1 nm. The density was about 2 × 1010 cm−2. Nitride-based QD metal–semiconductor–metal (MSM) photodetectors were also fabricated. It found that could significantly enhance photocurrent to dark current contrast ratio MSM use structure.
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L.W. Wu, S.J. Chang, T.C. Wen, Y.K. Su, J.F. Chen, W.C. Lai, C.H. Kuo, C.H. Chen, J.K. Sheu, Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes IEEE Journal of Quantum Electronics. ,vol. 38, pp. 446- 450 ,(2002) , 10.1109/3.998615
Koichi Tachibana, Takao Someya, Yasuhiko Arakawa, Ralph Werner, Alfred Forchel, Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser Applied Physics Letters. ,vol. 75, pp. 2605- 2607 ,(1999) , 10.1063/1.125092
K. Tachibana, T. Someya, Y. Arakawa, Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 74, pp. 383- 385 ,(1999) , 10.1063/1.123078
C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, B. Daudin, G. Fishman, Self-assembled InGaN quantum dots grown by molecular-beam epitaxy Applied Physics Letters. ,vol. 76, pp. 1570- 1572 ,(2000) , 10.1063/1.126098
E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sánchez, M. Razeghi, High-quality visible-blind AlGaN p-i-n photodiodes Applied Physics Letters. ,vol. 74, pp. 1171- 1173 ,(1999) , 10.1063/1.123960
A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, H. Temkin, Low noise p-π-n GaN ultraviolet photodetectors Applied Physics Letters. ,vol. 71, pp. 2334- 2336 ,(1997) , 10.1063/1.120023
LW Ji, Yan-Kuin Su, Shoou-Jinn Chang, LW Wu, TH Fang, Jone-Fang Chen, Tzong-Yow Tsai, Qi-Kun Xue, SC Chen, None, Growth of nanoscale InGaN self-assembled quantum dots Journal of Crystal Growth. ,vol. 249, pp. 144- 148 ,(2003) , 10.1016/S0022-0248(02)02130-9
Yu-Zung Chiou, Yan-Kuin Su, Shoou-Jinn Chang, Yi-Chao Lin, Chia-Sheng Chang, Chin-Hsiang Chen, InGaN/GaN MQW p–n junction photodetectors Solid-state Electronics. ,vol. 46, pp. 2227- 2229 ,(2002) , 10.1016/S0038-1101(02)00230-7
S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters. ,vol. 79, pp. 866- 868 ,(2001) , 10.1063/1.1385191
G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, E. J. Tarsa, High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN Applied Physics Letters. ,vol. 75, pp. 247- 249 ,(1999) , 10.1063/1.124337