Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors
作者： O. Katz , G. Bahir , J. Salzman
DOI: 10.1063/1.1753056
关键词: Photocurrent 、 Heterojunction 、 Wide-bandgap semiconductor 、 Optoelectronics 、 Schottky diode 、 Semiconductor 、 Carrier lifetime 、 Photodiode 、 Materials science 、 Photoconductivity
摘要: … Using the same gain mechanism for the power performance and … calculated power dependent and temporal photoresponse. … the responsivity dependence on the light incident power at …
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