Characteristics of In<tex>$_x$</tex>Al<tex>$_1-x$</tex>N–GaN High-Electron Mobility Field-Effect Transistor
作者： O. Katz , D. Mistele , B. Meyler , G. Bahir , J. Salzman
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摘要: GaN-based field effect transistors commonly include an Al/sub x/Ga/sub 1-x/N barrier layer for confinement of a two-dimensional electron gas (2DEG) in the barrier/GaN interface. Some limitations 1-x/N-GaN heterostructure can be, principle, avoided by use In/sub x/Al/sub as alternative barrier, which adds flexibility to engineering polarization-induced charges using tensile or compressive strain through varying value x. Here, implementation and electrical characterization 1-x/-GaN high mobility transistor with Indium content ranging from x=0.04 x=0.15 is described. The measured 2DEG carrier concentration 0.04/Al/sub 0.96/N-GaN reach 4/spl times/10/sup 13/ cm/sup -2/ at room temperature, Hall 480 750 2//V /spl middot/ s 300 10 K, respectively. increase results shift threshold voltage peak transconductance toward positive gate values, well decrease drain current. This consistent reduction polarization difference between GaN 1-x/N. Devices length 0.7 mu/m exhibit f/sub t/ max/ values 13 11 GHz,
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