Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage
作者： Yi Liu , Sarab Preet Singh , Yi Jie Ngoo , Lwin Min Kyaw , Milan Kumar Bera
DOI: 10.1116/1.4874599
关键词: Ohmic contact 、 Tantalum 、 Electrical resistivity and conductivity 、 Annealing (metallurgy) 、 Wide-bandgap semiconductor 、 Materials science 、 Heterojunction 、 Analytical chemistry 、 Contact resistance 、 Breakdown voltage
摘要: The authors have studied the electrical characteristics of Hf/Al/Ta ohmic contacts on In0.18Al0.82N/GaN heterostructure grown Si (111) substrate. With annealing at 600 °C in vacuum (which is ∼200 °C lower than that for traditional Ti/Al/Ni/Au contacts), a minimum contact resistance ∼0.58 Ω·mm and specific resistivity ∼6.75 × 10−6 Ω·cm2 are obtained. comparable to contacts. Owing temperature, exhibit better surface morphology edge acuity. More importantly, show smooth interface with In0.18Al0.82N/GaN, whereas spike structures penetrate In0.18Al0.82N layer observed As result, source–carrier-injection induced breakdown mechanism reduced In0.18Al0.82N/GaN-on-Si high electron mobility transistors (HEMTs) contacts, thereby leading an improved three-terminal off-state breakdo...
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