Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
作者： C.-F. Lo , L. Liu , C. Y. Chang , F. Ren , V. Craciun
DOI: 10.1116/1.3545811
关键词:
摘要: Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of 0.65 Ω mm (specific resistivity 2×10−5 Ω cm2) achieved after 800 °C annealing structures cap, while those exhibited their lowest higher morphology showed considerable roughening by 750 °C but carrier mobility stable until temperatures 850 °C. Diffuse scattering experiments that morphological roughness interface increased as result these data were consistent outdiffusion Ga into InAlN. Unpassivated high electron transistors gate dimension 0.7×180 μm2 fabricated using maximum drain current 1.3 A/mm an extrinsic transconductance 366 mS/mm. presence G...
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