Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors
作者： B. Sherliker , M.P. Halsall , P. Harrison , V.D. Jovanović , D. Indjin
DOI: 10.12693/APHYSPOLA.107.174
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摘要: We report the growth and characterization of AlGaN/GaN multiple quantum well structures designed to have intersubband transitions in mid-infrared region spectrum. The samples were nominally undoped but found contain a high electron population wells induced by local polarization fields. sample was characterized use Raman spectroscopy photocurrent spectroscopy. shows electronic scattering from wells. e1-e2 e1-e3 confined 2d can clearly be observed. A absorb at 4μm fabricated into mesa vertical measured under normal incidence illumination free-electron laser FELIX. wavelength bias dependent observed mid-IR peak responsivity order 50μA/W 4 K, still being measurable room temperature.
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