InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties
作者： Liwen Sang , Meiyong Liao , Yasuo Koide , Masatomo Sumiya , None
DOI: 10.1063/1.4914908
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摘要: InxGa1−xN, with the tunable direct bandgaps from ultraviolet to near infrared region, offers a promising candidate for high-efficiency next-generation thin-film photovoltaic applications. Although adoption of thick InGaN film as active region is desirable obtain efficient light absorption and carrier collection compared InGaN/GaN quantum wells structure, understanding on effect structural design still unclear due poor-quality films thickness difficulty p-type doping. In this paper, we comprehensively investigate effects epitaxy, doping, device performances InGaN-based solar cells. The high-quality obtained AlN/sapphire template, p-In0.08Ga0.92N achieved high hole concentration more than 1018 cm−3. dependence different structures, such regions analyzed respect transport...
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