Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
作者： Anna Mukhtarova , Sirona Valdueza-Felip , Luca Redaelli , Christophe Durand , Catherine Bougerol
DOI: 10.1063/1.4947445
关键词:
摘要: We investigate the photovoltaic performance of pseudomorphic In0.1Ga0.9N/GaN multiple-quantum well (MQW) solar cells as a function total active region thickness. An increase in number wells from 5 to 40 improves short-circuit current and open-circuit voltage, resulting 10-fold enhancement overall conversion efficiency. Further increasing leads carrier collection losses due an incomplete depletion region. Capacitance-voltage measurements point hole diffusion length 48 nm MQW
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