作者: Xuanqi Huang , Houqiang Fu , Hong Chen , Xiaodong Zhang , Zhijian Lu
DOI: 10.1063/1.4980139
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摘要: We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on m-plane ( 20 2 ¯ 1 ) plane bulk GaN substrates. The optical properties photovoltaic performance of InGaN were systematically studied, results compared to conventional polar c-plane devices. absorption spectra, current density–voltage (J–V) characteristics, external quantum efficiency (EQE), internal (IQE) measured for m-plane, plane, MQW cells. Nonpolar showed best across all devices, with a high open-circuit voltage 2.32 V, low bandgap-voltage offset 0.59 V, highest EQE IQE. In contrast, device lowest despite spectra. This huge difference is attributed better carrier transport collection o...