Fabrication and characterization of Si/ ∼10-μm mesa-etched Si junctions by surface activated bonding
作者： K. Takemura , M. Morimoto , S. Nishida , J. Liang , N. Shigekawa
DOI: 10.1109/IMFEDK.2014.6867078
关键词:
摘要: Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and surface activated bonding. The SEM observation of their cross section indicated that height mesa approximately 13 μm. Their capacitance-voltage current-voltage characteristics were also measured.
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