Metal bonding strength in low-temperature processed titanium using atomic force microscopy with single-wall carbon nanotube tip
作者： E. M. Choi , Y. H. Cui , S. H. Kwon , A. R. Kim , H. S. Choi
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摘要: We report the development of a Ti–Ti bonding process at low temperature below 200 °C using chemically surface-activated Ti thin films and reliable evaluation method for measuring bond strength by means atomic force microscopy (AFM). Using as an interlayer enables void-free because exhibits fast diffusion oxide solubility. On other hand, wafer is important processing step 3D circuit integration that requires high reliability process. However, bonding-strength values obtained employing conventional measurement devices limited comparably large errors restricted availability suitable sample material. In this study, use AFM to measure proposed. The interfacial properties depend on deposition parameters. A was found be appropriate wafer-bonding pretreatment methods like plasma activation chemical result in approximately 8.22 J/m2, sufficient applications integration. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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