Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding
作者： Karen Derendorf , Stephanie Essig , Eduard Oliva , Vera Klinger , Tobias Roesener
DOI: 10.1109/JPHOTOV.2013.2273097
关键词:
摘要: … The growth of III–V semiconductors on silicon is a challenging field of research [6]–[9]. The large differences in thermal expansion coefficients and lattice constants between GaAs and Si …
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fraunhofer.de 参考文章(25)
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